The Single Ion GeV Microbeam Facility in Lanzhou/Irradiation effects of swift heavy ions in wide-bandgap semiconductor materials and devices

22.08.2025 – FLNR Scientific Seminar, 11-00, FlerovLab Conference Hall Guanghua Du, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China The Single Ion GeV Microbeam Facility in Lanzhou High energy heavy ions causes lattice damage, polymer chain break or cross-linking in the material and then result in nanoscale latent …